国家/地区 Usa（3）
关键词 DEVICE SIMULATION（2） GRAPHENE FIELDEFFEC.（2） QUANTUM TRANSPORT（2）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（3）
出版时间
机构 UNIV FLORIDA（2）
作者 YOON Y（3）

Ballistic I-V Characteristics of Short-Channel Graphene Field-Effect Transistors: Analysis and Optimization for Analog and RF Applications

IEEE TRANSACTIONS ON ELECTRON DEVICES

GANAPATHI K, YOON Y, LUNDSTROM M, SALAHUDDIN S

Performance comparison of graphene nanoribbon FETs with Schottky contacts and doped reservoirs

IEEE TRANSACTIONS ON ELECTRON DEVICES

YOON Y, FIORI G, HONG S, IANNACCONE G, GUO J

Scaling behaviors of graphene nanoribbon FETs: A three-dimensional quantum simulation study

IEEE TRANSACTIONS ON ELECTRON DEVICES

OUYANG Y, YOON Y, GUO J