国家/地区 Usa（3）
关键词 FIELD EFFECT TRANSISTOR（3）
出版物 APPLIED PHYSICS LET.（2）
出版时间 2012（3）
机构 UNIV TEXAS A.（2）
作者

Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices

ACS NANO

BRESNEHAN MS, HOLLANDER MJ, WETHERINGTON M, LABELLA M, TRUMBULL KA, CAVALERO R, SNYDER DW, ROBINSON JA

Detection of sulfur dioxide gas with graphene field effect transistor

APPLIED PHYSICS LETTERS

REN YJ, ZHU CF, CAI WW, LI HF, JI HX, KHOLMANOV I, WU YP, PINER RD, RUOFF RS

Scaling of Al2O3 dielectric for graphene field-effect transistors

APPLIED PHYSICS LETTERS

FALLAHAZAD B, LEE K, LIAN G, KIM S, CORBET CM, FERRER DA, COLOMBO L, TUTUC E