国家/地区 Usa（4）
关键词 FLUOROPOLYMER（2） RF ANALOG DEVICE（2）
出版物 IEEE ELECTRON DEVIC.（2）
出版时间 2013（4）
机构 UNIV TEXAS AUSTIN（4）
作者 HA TJ（4）

25 GHz Embedded-Gate Graphene Transistors with High-K Dielectrics on Extremely Flexible Plastic Sheets

ACS NANO

LEE J, HA TJ, LI HF, PARRISH KN, HOLT M, DODABALAPUR A, RUOFF RS, AKINWANDE D

The Restorative Effect of Fluoropolymer Coating on Electrical Characteristics of Graphene Field-Effect Transistors

IEEE ELECTRON DEVICE LETTERS

HA TJ, LEE J, AKINWANDE D, DODABALAPUR A

High-Performance Current Saturating Graphene Field-Effect Transistor With Hexagonal Boron Nitride Dielectric on Flexible Polymeric Substrates

IEEE ELECTRON DEVICE LETTERS

LEE J, HA TJ, PARRISH KN, CHOWDHURY SF, TAO L, DODABALAPUR A, AKINWANDE D

Transformation of the Electrical Characteristics of Graphene Field-Effect Transistors with Fluoropolymer

ACS APPLIED MATERIALS INTERFACES

HA TJ, LEE J, CHOWDHURY SF, AKINWANDE D, ROSSKY PJ, DODABALAPUR A