国家/地区 Usa（2）
关键词
出版物 JOURNAL OF VACUUM SCIENCE TECHNOLOGY B（2）
出版时间 2010（2）
机构
作者

Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

DIMITRAKOPOULOS C, LIN YM, GRILL A, FARMER DB, FREITAG M, SUN YN, HAN SJ, CHEN ZH, JENKINS KA, ZHU Y, LIU ZH, MCARDLE TJ, OTT JA, WISNIEFF R, AVOURIS P

Formation of epitaxial graphene on SiC(0001) using vacuum or argon environments

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

LUXMI, SRIVASTAVA N, FEENSTRA RM, FISHER PJ