国家/地区 Vietnam（3）
关键词 SCHOTTKY CONTACT（3）
出版物
出版时间 2018（3）
机构 LE QUY DON T.（3）
作者 PHAM KD（3）

First principles study on the electronic properties and Schottky barrier of Graphene/InSe heterostructure

SUPERLATTICES MICROSTRUCTURES

PHAM KD, HIEU NN, ILYASOV VV, PHUC HV, HOI BD, FEDDI E, THUAN NV, NGUYEN CV

First principles study of the electronic properties and Schottky barrier in vertically stacked graphene on the Janus MoSeS under electric field

COMPUTATIONAL MATERIALS SCIENCE

PHAM KD, HIEU NN, PHUC HV, HOI BD, ILYSOV VV, AMIN B, NGUYEN CV

First principles calculations of the geometric structures and electronic properties of van der Waals heterostructure based on graphene, hexagonal boron nitride and molybdenum diselenide

DIAMOND RELATED MATERIALS

PHAM KD, NGUYEN CV