国家/地区 Vietnam（6）
关键词 ELECTRONIC PROPERTI.（4） GRAPHENE（4） SCHOTTKY CONTACT（4）
DFT CALCULATION（2）
出版物 SUPERLATTICES MICRO.（2）
出版时间 2018（5）
机构 LE QUY DON TECH UNIV（6）
作者 HOI BD（6）

First principles study on the electronic properties and Schottky barrier of Graphene/InSe heterostructure

SUPERLATTICES MICROSTRUCTURES

PHAM KD, HIEU NN, ILYASOV VV, PHUC HV, HOI BD, FEDDI E, THUAN NV, NGUYEN CV

First principles study of the electronic properties and Schottky barrier in vertically stacked graphene on the Janus MoSeS under electric field

COMPUTATIONAL MATERIALS SCIENCE

PHAM KD, HIEU NN, PHUC HV, HOI BD, ILYSOV VV, AMIN B, NGUYEN CV

Tuning the Electronic and Optical Properties of Two-Dimensional Graphene-like Nanosheet by Strain Engineering

JOURNAL OF ELECTRONIC MATERIALS

PHUC HV, TUAN VV, HIEU NN, ILYASOV VV, FEDOROV IA, HOI BD, PHUONG LTT, HIEU NV, FEDDI E, NGUYEN CV

Interlayer coupling and electric field tunable electronic properties and Schottky barrier in a graphene/bilayer-GaSe van der Waals heterostructure

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

PHUC HV, HIEU NN, HOI BD, NGUYEN CV

First principle study on the electronic properties and Schottky contact of graphene adsorbed on MoS2 monolayer under applied out-plane strain

SURFACE SCIENCE

PHUC HV, HIEU NN, HOI BD, PHUONG LTT, NGUYEN CV

Out-of-plane strain and electric field tunable electronic properties and Schottky contact of graphene/antimonene heterostructure

SUPERLATTICES MICROSTRUCTURES

PHUC HV, HIEU NN, HOI BD, PHUONG LTT, HIEU NV, NGUYEN CV