国家/地区 Vietnam（3）
关键词
出版物 JOURNAL OF APPLIED .（2） JOURNAL OF PHYSICSC.（2）
出版时间 2010（4）
机构 HANOI UNIV T.（2）
作者 DOLLFUS P（4）

Effects of charged impurities and lattice defects on transport properties of nanoscale graphene structures (vol 106, 023719, 2009)

JOURNAL OF APPLIED PHYSICS

DO VN, DOLLFUS P

Modeling of metal-graphene coupling and its influence on transport properties in graphene at the charge neutrality point

JOURNAL OF PHYSICSCONDENSED MATTER

DO VN, DOLLFUS P

The conduction gap in double gate bilayer graphene structures

JOURNAL OF PHYSICSCONDENSED MATTER

NGUYEN VH, BOURNEL A, DOLLFUS P

Negative differential resistance in zigzag-edge graphene nanoribbon junctions

JOURNAL OF APPLIED PHYSICS

DO VN, DOLLFUS P