国家/地区 Germany（5） Usa（3）
关键词
出版物 PHYSICAL REVIEW B（2）
出版时间 2010（8）
机构 UNIV ERLANGE.（3）
作者 SEYLLER T（8）

The interaction of quasi-particles in graphene with chemical dopants

NEW JOURNAL OF PHYSICS

BOSTWICK A, OHTA T, MCCHESNEY JL, EMTSEV KV, SPECK F, SEYLLER T, HORN K, KEVAN SD, ROTENBERG E

Automated preparation of high-quality epitaxial graphene on 6H-SiC(0001)

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

OSTLER M, SPECK F, GICK M, SEYLLER T

Strong phonon-plasmon coupled modes in the graphene/silicon carbide heterosystem

PHYSICAL REVIEW B

KOCH RJ, SEYLLER T, SCHAEFER JA

Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

RISTEIN J, ZHANG WY, SPECK F, OSTLER M, LEY L, SEYLLER T

Observation of Plasmarons in Quasi-Freestanding Doped Graphene

SCIENCE

BOSTWICK A, SPECK F, SEYLLER T, HORN K, POLINI M, ASGARI R, MACDONALD AH, ROTENBERG E

Quantum oscillations and quantum Hall effect in epitaxial graphene

PHYSICAL REVIEW B

JOBST J, WALDMANN D, SPECK F, HIRNER R, MAUDE DK, SEYLLER T, WEBER HB

Extended van Hove Singularity and Superconducting Instability in Doped Graphene

PHYSICAL REVIEW LETTERS

MCCHESNEY JL, BOSTWICK A, OHTA T, SEYLLER T, HORN K, GONZALEZ J, ROTENBERG E

Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

WEINGART S, BOCK C, KUNZE U, EMTSEV KV, SEYLLER T, LEY L