国家/地区 Usa（11）
关键词 GRAPHENE（2） GRAPHENE NANORIBBON（2） NANOELECTRONIC（2）
出版物 NANO LETTERS（3） NATURE NANOTECHNOLO.（2）
出版时间 2010（11）
机构 UNIV CALIF LOS ANGELES（11）
作者 BAI JW（11）

Fabrication and electrical properties of graphene nanoribbons

MATERIALS SCIENCE ENGINEERING RREPORTS

BAI JW, HUANG Y

Enhanced Conductance Fluctuation by Quantum Confinement Effect in Graphene Nanoribbons

NANO LETTERS

XU GY, TORRES CM, SONG EB, TANG JS, BAI JW, DUAN XF, ZHANG YG, WANG KL

Sub-100 nm Channel Length Graphene Transistors

NANO LETTERS

LIAO L, BAI JW, CHENG R, LIN YC, JIANG S, QU YQ, HUANG Y, DUAN XF

High-speed graphene transistors with a self-aligned nanowire gate

NATURE

LIAO L, LIN YC, BAO MQ, CHENG R, BAI JW, LIU YA, QU YQ, WANG KL, HUANG Y, DUAN XF

Very large magnetoresistance in graphene nanoribbons

NATURE NANOTECHNOLOGY

BAI JW, CHENG R, XIU FX, LIAO L, WANG MS, SHAILOS A, WANG KL, HUANG Y, DUAN XF

Low-noise submicron channel graphene nanoribbons

APPLIED PHYSICS LETTERS

XU GY, BAI JW, TORRES CM, SONG EB, TANG JS, ZHOU Y, DUAN XF, ZHANG YG, WANG KL

High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics

ADVANCED MATERIALS

LIAO L, BAI JW, LIN YC, QU YQ, HUANG Y, DUAN XF

Top-Gated Graphene Nanoribbon Transistors with Ultrathin High-k Dielectrics

NANO LETTERS

LIAO L, BAI JW, CHENG R, LIN YC, JIANG S, HUANG Y, DUAN XF

High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

LIAO L, BAI JW, QU YQ, LIN YC, LI YJ, HUANG Y, DUAN XF

Graphene nanomesh

NATURE NANOTECHNOLOGY

BAI JW, ZHONG X, JIANG S, HUANG Y, DUAN XF