国家/地区 Usa（8）
关键词 NANOELECTRONIC（2） TRANSISTOR（2）
出版物 NANO LETTERS（2）
出版时间 2010（8）
机构 UNIV CALIF LOS ANGELES（8）
作者 LIAO L（8）

Graphene-dielectric integration for graphene transistors

MATERIALS SCIENCE ENGINEERING RREPORTS

LIAO L, DUAN XF

Sub-100 nm Channel Length Graphene Transistors

NANO LETTERS

LIAO L, BAI JW, CHENG R, LIN YC, JIANG S, QU YQ, HUANG Y, DUAN XF

High-speed graphene transistors with a self-aligned nanowire gate

NATURE

LIAO L, LIN YC, BAO MQ, CHENG R, BAI JW, LIU YA, QU YQ, WANG KL, HUANG Y, DUAN XF

Very large magnetoresistance in graphene nanoribbons

NATURE NANOTECHNOLOGY

BAI JW, CHENG R, XIU FX, LIAO L, WANG MS, SHAILOS A, WANG KL, HUANG Y, DUAN XF

High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics

ADVANCED MATERIALS

LIAO L, BAI JW, LIN YC, QU YQ, HUANG Y, DUAN XF

Top-Gated Graphene Nanoribbon Transistors with Ultrathin High-k Dielectrics

NANO LETTERS

LIAO L, BAI JW, CHENG R, LIN YC, JIANG S, HUANG Y, DUAN XF

High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

LIAO L, BAI JW, QU YQ, LIN YC, LI YJ, HUANG Y, DUAN XF

Single-layer graphene on Al2O3/Si substrate: better contrast and higher performance of graphene transistors

NANOTECHNOLOGY

LIAO L, BAI JW, QU YQ, HUANG Y, DUAN XF