国家/地区 Usa（5）
关键词 NANOELECTRONIC（2）
出版物 NANO LETTERS（2）
出版时间 2010（5）
机构 UNIV CALIF LOS ANGELES（5）
作者 LIN YC（5）

Sub-100 nm Channel Length Graphene Transistors

NANO LETTERS

LIAO L, BAI JW, CHENG R, LIN YC, JIANG S, QU YQ, HUANG Y, DUAN XF

High-speed graphene transistors with a self-aligned nanowire gate

NATURE

LIAO L, LIN YC, BAO MQ, CHENG R, BAI JW, LIU YA, QU YQ, WANG KL, HUANG Y, DUAN XF

High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics

ADVANCED MATERIALS

LIAO L, BAI JW, LIN YC, QU YQ, HUANG Y, DUAN XF

Top-Gated Graphene Nanoribbon Transistors with Ultrathin High-k Dielectrics

NANO LETTERS

LIAO L, BAI JW, CHENG R, LIN YC, JIANG S, HUANG Y, DUAN XF

High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

LIAO L, BAI JW, QU YQ, LIN YC, LI YJ, HUANG Y, DUAN XF