国家/地区
关键词 FIELDEFFECT TRANSISTORS FETS（2）
出版物 IEEE ELECTRON DEVICE LETTERS（2）
出版时间 2011（2）
机构
作者

Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics

IEEE ELECTRON DEVICE LETTERS

HABIBPOUR O, CHEREDNICHENKO S, VUKUSIC J, STAKE J

Understanding Asymmetric Transportation Behavior in Graphene Field-Effect Transistors Using Scanning Kelvin Probe Microscopy

IEEE ELECTRON DEVICE LETTERS

LIU WJ, YU HY, XU SH, ZHANG Q, ZOU X, WANG JL, PEY KL, WEI J, ZHU HL, LI MF