国家/地区 Usa（6）
关键词 HEXAGONAL BORON NITRIDE（7）
出版物 ACS NANO（4）
出版时间 2012（7）
机构 COLUMBIA UNI.（2）
作者 TANIGUCHI T（3） WATANABE K（3） HONE J（2） WANG L（2）

Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices

ACS NANO

KIM KK, HSU A, JIA XT, KIM SM, SHI YM, DRESSELHAUS M, PALACIOS T, KONG J

Negligible Environmental Sensitivity of Graphene in a Hexagonal Boron Nitride/Graphene/h-BN Sandwich Structure

ACS NANO

WANG L, CHEN ZY, DEAN CR, TANIGUCHI T, WATANABE K, BRUS LE, HONE J

Charge Inhomogeneity Determines Oxidative Reactivity of Graphene on Substrates

ACS NANO

YAMAMOTO M, EINSTEIN TL, FUHRER MS, CULLEN WG

Gate-Defined Confinement in Bilayer Graphene-Hexagonal Boron Nitride Hybrid Devices

NANO LETTERS

GOOSSENS AM, DRIESSEN SCM, BAART TA, WATANABE K, TANIGUCHI T, VANDERSYPEN LMK

Graphene based heterostructures

SOLID STATE COMMUNICATIONS

DEAN C, YOUNG AF, WANG L, MERIC I, LEE GH, WATANABE K, TANIGUCHI T, SHEPARD K, KIM P, HONE J

Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices

ACS NANO

BRESNEHAN MS, HOLLANDER MJ, WETHERINGTON M, LABELLA M, TRUMBULL KA, CAVALERO R, SNYDER DW, ROBINSON JA

Logic Inverter Implemented with CVD-Assembled Graphene FET on Hexagonal Boron Nitride

IEEE TRANSACTIONS ON NANOTECHNOLOGY

KIM E, JAIN N, XU Y, YU B