国家/地区 China（3）
关键词 MEMORY DEVICE（4）
出版物
出版时间 2012（4）
机构
作者 HUANG W（2） LIU JQ（2） LU G（2） ZHANG H（2）

Preparation of MoS2-Polyvinylpyrrolidone Nanocomposites for Flexible Nonvolatile Rewritable Memory Devices with Reduced Graphene Oxide Electrodes

SMALL

LIU JQ, ZENG ZY, CAO XH, LU G, WANG LH, FAN QL, HUANG W, ZHANG H

Nonvolatile memory devices based on electrical conductance tuning in poly(N-vinylcarbazole)-graphene composites

ORGANIC ELECTRONICS

ZHANG Q, PAN J, YI X, LI L, SHANG SM

Graphene/Metal Contacts: Bistable States and Novel Memory Devices

ADVANCED MATERIALS

WANG XM, XIE WG, DU J, WANG CL, ZHAO N, XU JB

Chemoselective Photodeoxidization of Graphene Oxide Using Sterically Hindered Amines as Catalyst: Synthesis and Applications

ACS NANO

ZHAO F, LIU JQ, HUANG X, ZOU X, LU G, SUN PJ, WU SX, AI W, YI MD, QI XY, XIE LH, WANG JL, ZHANG H, HUANG W