国家/地区 Japan（5）
关键词
出版物
出版时间 2012（5）
机构 NTT CORP（5）
作者 KAGESHIMA H（5）

Quantum Hall Effect and Carrier Scattering in Quasi-Free-Standing Monolayer Graphene

APPLIED PHYSICS EXPRESS

TANABE S, TAKAMURA M, HARADA Y, KAGESHIMA H, HIBINO H

First-principles calculation of 0th-layer graphene-like growth of C on SiC(0001)

PHYSICAL REVIEW B

INOUE M, KAGESHIMA H, KANGAWA Y, KAKIMOTO K

The physics of epitaxial graphene on SiC(0001)

JOURNAL OF PHYSICSCONDENSED MATTER

KAGESHIMA H, HIBINO H, TANABE S

Growth and electronic transport properties of epitaxial graphene on SiC

JOURNAL OF PHYSICS DAPPLIED PHYSICS

HIBINO H, TANABE S, MIZUNO S, KAGESHIMA H

Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001)

JAPANESE JOURNAL OF APPLIED PHYSICS

TANABE S, SEKINE Y, KAGESHIMA H, HIBINO H