国家/地区 Germany（4）
关键词 GRAPHENE（2）
出版物 PHYSICAL REVIEW B（2）
出版时间 2013（6）
机构 UNIV REGENSB.（2）
作者 OSTLER M（6）

Strong Plasmon Reflection at Nanometer-Size Gaps in Monolayer Graphene on SiC

NANO LETTERS

CHEN JN, NESTEROV ML, NIKITIN AY, THONGRATTANASIRI S, ALONSOGONZALEZ P, SLIPCHENKO TM, SPECK F, OSTLER M, SEYLLER T, CRASSEE I, KOPPENS FHL, MARTINMORENO L, DE ABAJO FJG, KUZMENKO AB, HILLENBRAND R

Observation of 4 nm Pitch Stripe Domains Formed by Exposing Graphene to Ambient Air

ACS NANO

WASTL DS, SPECK F, WUTSCHER E, OSTLER M, SEYLLER T, GIESSIBL FJ

Direct growth of quasi-free-standing epitaxial graphene on nonpolar SiC surfaces

PHYSICAL REVIEW B

OSTLER M, DERETZIS I, MAMMADOV S, GIANNAZZO F, NICOTRA G, SPINELLA C, SEYLLER T, LA MAGNA A

Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC

PHYSICAL REVIEW B

BIRKNER B, PACHNIOWSKI D, SANDNER A, OSTLER M, SEYLLER T, FABIAN J, CIORGA M, WEISS D, EROMS J

Small scale rotational disorder observed in epitaxial graphene on SiC(0001)

NEW JOURNAL OF PHYSICS

WALTER AL, BOSTWICK A, SPECK F, OSTLER M, KIM KS, CHANG YJ, MORESCHINI L, INNOCENTI D, SEYLLER T, HORN K, ROTENBERG E

Formation of high-quality quasi-free-standing bilayer graphene on SiC(0001) by oxygen intercalation upon annealing in air

CARBON

OLIVEIRA MH, SCHUMANN T, FROMM F, KOCH R, OSTLER M, RAMSTEINER M, SEYLLER T, LOPES JMJ, RIECHERT H