国家/地区 Taiwan（9）
关键词 DEFECT（3） GRAPHENE（3） SI（3）
ELECTRICAL PROPERTI.（2） ELECTRICAL PROPERTY（2） NANOSTRUCTURE（2）
SCHOTTKY BARRIER HE.（2） SEMICONDUCTOR（2）
出版物 APPLIED PHYSICS AMA.（2） APPLIED PHYSICS LET.（2） APPLIED SURFACE SCI.（2）
MATERIALS CHEMISTRY.（2）
出版时间 2014（10）
机构 NATL CHANGHU.（9）
作者 LIN YJ（10）

Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe

APPLIED SURFACE SCIENCE

LIN YJ, ZENG JJ

Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

APPLIED SURFACE SCIENCE

LIN YJ, LIN JH

Electrical and optoelectronic properties of graphene Schottky contact on Si-nanowire arrays with and without H2O2 treatment

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

ZENG JJ, LIN YJ

Carrier transport and photoresponse for heterojunction diodes based on the reduced graphene oxide-based TiO2 composite and p-type Si

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

LIN YJ, YANG SH

Tuning the work function of graphene by nitrogen plasma treatment with different radio-frequency powers

APPLIED PHYSICS LETTERS

ZENG JJ, LIN YJ

Fully Printed, Rapid-Response Sensors Based on Chemically Modified Graphene for Detecting NO2 at Room Temperature

ACS APPLIED MATERIALS INTERFACES

HUANG L, WANG ZP, ZHANG JK, PU JL, LIN YJ, XU SH, SHEN L, CHEN Q, SHI WZ

Effects of H2O2 treatment on the optoelectronic property of poly(3-hexylthiophene) doped with the reduced graphene oxide sheets/Si-nanowire arrays/n-type Si diodes

MATERIALS CHEMISTRY PHYSICS

CHIN YM, LIN YJ

Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

MATERIALS CHEMISTRY PHYSICS

ZENG JJ, LIN YJ

Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes

APPLIED PHYSICS LETTERS

ZENG JJ, LIN YJ

Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment

THIN SOLID FILMS

LIN JH, ZENG JJ, LIN YJ