国家/地区 England（3）
关键词
出版物 JOURNAL OF APPLIED PHYSICS（3）
出版时间 2014（3）
机构
作者

Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

JOURNAL OF APPLIED PHYSICS

HOPF T, VASSILEVSKI KV, ESCOBEDOCOUSIN E, KING PJ, WRIGHT NG, O NEILL AG, HORSFALL AB, GOSS JP, WELLS GH, HUNT MRC

Electronic properties of graphene-single crystal diamond heterostructures (vol 114, 053709, 2013)

JOURNAL OF APPLIED PHYSICS

ZHAO F, NGUYEN TT, GOLSHARIFI M, AMAKUBO S, LOH KP, JACKMAN RB

Magnetic scanning gate microscopy of graphene Hall devices (invited)

JOURNAL OF APPLIED PHYSICS

RAJKUMAR RK, ASENJO A, PANCHAL V, MANZIN A, IGLESIASFREIRE O, KAZAKOVA O