国家/地区 France（3）
关键词
出版物 SCIENTIFIC REPORTS（3）
出版时间 2014（3）
机构
作者 OUERGHI A（2） PALLECCHI E（2）

Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices

SCIENTIFIC REPORTS

LOGOTETA D, FIORI G, IANNACCONE G

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

SCIENTIFIC REPORTS

PALLECCHI E, LAFONT F, CAVALIERE V, SCHOPFER F, MAILLY D, POIRIER W, OUERGHI A

Flower-Shaped Domains and Wrinkles in Trilayer Epitaxial Graphene on Silicon Carbide

SCIENTIFIC REPORTS

LALMI B, GIRARD JC, PALLECCHI E, SILLY M, DAVID C, LATIL S, SIROTTI F, OUERGHI A