国家/地区 Korea（3）
关键词
出版物
出版时间 2014（3）
机构 GWANGJU INST SCI TECHNOL（3）
作者 LEE YG（3）

Quantitatively estimating defects in graphene devices using discharge current analysis method

SCIENTIFIC REPORTS

JUNG U, LEE YG, KANG CG, LEE S, KIM JJ, HWANG HJ, LIM SK, HAM MH, LEE BH

Quantitative analysis of interfacial reactions at a graphene/SiO2 interface using the discharge current analysis method

APPLIED PHYSICS LETTERS

JUNG U, LEE YG, KANG CG, LEE S, LEE BH

Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate

CARBON

LEE S, IYORE OD, PARK S, LEE YG, JANDHYALA S, KANG CG, MORDI G, KIM Y, QUEVEDOLOPEZ M, GNADE BE, WALLACE RM, LEE BH, KIM J