国家/地区 China（3） Sweden（3）
关键词
出版物 RSC ADVANCES（2）
出版时间 2015（7）
机构 CHINESE ACAD.（3） LINKOPING UN.（3）
作者 XIA C（7）

Li induced effects in the core level and pi-band electronic structure of graphene grown on C-face SiC

JOURNAL OF VACUUM SCIENCE TECHNOLOGY A

JOHANSSON LI, XIA C, VIROJANADARA C

Soft X-ray Exposure Promotes Na Intercalation in Graphene Grown on Si-Face SiC

MATERIALS

WATCHARINYANON S, XIA C, NIU YR, ZAKHAROV AA, JOHANSSON LI, YAKIMOVA R, VIROJANADARA C

Graphene based integrated tandem supercapacitors fabricated directly on separators

NANO ENERGY

CHEN W, XIA C, ALSHAREEF HN

Effects of aluminum on epitaxial graphene grown on C-face SiC

JOURNAL OF APPLIED PHYSICS

XIA C, JOHANSSON LI, NIU YR, HULTMAN L, VIROJANADARA C

Reversible n-Type Doping of Graphene by H2O-Based Atomic-Layer Deposition and Its Doping Mechanism

JOURNAL OF PHYSICAL CHEMISTRY C

ZHENG L, CHENG XH, WANG ZJ, XIA C, CAO D, SHEN LY, WANG Q, YU YH, SHEN DS

Passivation effect of graphene on AlGaN/GaN Schottky diode

RSC ADVANCES

SHEN LY, CHENG XH, WANG ZJ, XIA C, CAO D, ZHENG L, WANG Q, YU YH

Direct growth of Sb2Te3 on graphene by atomic layer deposition

RSC ADVANCES

ZHENG L, CHENG XH, CAO D, WANG Q, WANG ZJ, XIA C, SHEN LY, YU YH, SHEN DS