国家/地区 China（2）
关键词 4HSIC（3）
出版物
出版时间 2015（3）
机构 CHINESE ACAD.（2）
作者 LIU XF（2）

Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition

MATERIALS

CAI SX, LIU ZH, ZHONG N, LIU SB, LIU XF

Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

NANOMATERIALS

LIU XF, CHEN Y, SUN CZ, GUAN M, ZHANG Y, ZHANG F, SUN GS, ZENG YP

Epitaxial graphene contact electrode for silicon carbide based ultraviolet photodetector

JOURNAL OF PHYSICS DAPPLIED PHYSICS

KUSDEMIR E, OZKENDIR D, FIRAT V, CELEBI C