国家/地区 China（4）
关键词
出版物 RSC ADVANCES（2）
出版时间 2015（4）
机构 CHINESE ACAD SCI（4）
作者 CHENG XH（4）

Reversible n-Type Doping of Graphene by H2O-Based Atomic-Layer Deposition and Its Doping Mechanism

JOURNAL OF PHYSICAL CHEMISTRY C

ZHENG L, CHENG XH, WANG ZJ, XIA C, CAO D, SHEN LY, WANG Q, YU YH, SHEN DS

Passivation effect of graphene on AlGaN/GaN Schottky diode

RSC ADVANCES

SHEN LY, CHENG XH, WANG ZJ, XIA C, CAO D, ZHENG L, WANG Q, YU YH

Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

ZHENG L, CHENG XH, YU YH, XIE YH, LI XL, WANG ZJ

Direct growth of Sb2Te3 on graphene by atomic layer deposition

RSC ADVANCES

ZHENG L, CHENG XH, CAO D, WANG Q, WANG ZJ, XIA C, SHEN LY, YU YH, SHEN DS