国家/地区 Korea（39）
关键词 GRAPHENE（13） ADSORPTION（3） OHMIC CONTACT（2）
PLATINUM（2） SCHOTTKY DIODE（2） SUPERCAPACITOR（2）
出版物 CARBON（4） ACS APPLIED MATERIA.（3） ACS NANO（3）
APPLIED PHYSICS LET.（2） CHEMISTRY OF MATERI.（2） JOURNAL OF PHYSICS .（2）
SCIENTIFIC REPORTS（2）
出版时间 2015（39）
机构 SUNGKYUNKWAN.（5） YONSEI UNIV（5） CHONBUK NATL.（3） DONGGUK UNIV（3）
HANYANG UNIV（3） KONKUK UNIV（3） KOREA UNIV（3） KOREA INST S.（2）
SEOUL NATL U.（2）
作者 KIM H（39）

Schottky barrier contrasts in single and bi-layer graphene contacts for MoS2 field-effect transistors

APPLIED PHYSICS LETTERS

DU H, KIM T, SHIN S, KIM D, KIM H, SUNG JH, LEE MJ, SEO DH, LEE SW, JO MH, SEO S

Remarkable Conversion Between n- and p-Type Reduced Graphene Oxide on Varying the Thermal Annealing Temperature

CHEMISTRY OF MATERIALS

TU NDK, CHOI J, PARK CR, KIM H

Towards an Accurate Measurement of Thermal Contact Resistance at Chemical Vapor Deposition-Grown Graphene/SiO2 Interface Through Null Point Scanning Thermal Microscopy

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

CHUNG J, HWANG G, KIM H, YANG W, KWON O

Reduction of graphene oxide/alginate composite hydrogels for enhanced adsorption of hydrophobic compounds

NANOTECHNOLOGY

KIM S, YOO Y, KIM H, LEE E, LEE JY

Three-dimensionally macroporous, Si and N-incorporated graphene aerogels for gas adsorbents

MATERIALS EXPRESS

YUN S, KIM H, LEE H, PARK HS

Nucleation and Growth of the HfO2 Dielectric Layer for Graphene-Based Devices

CHEMISTRY OF MATERIALS

OH IK, TANSKANEN J, JUNG H, KIM K, LEE MJ, LEE Z, LEE SK, AHN JH, LEE CW, KIM K, KIM H, LEE HBR

Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells

ACS APPLIED MATERIALS INTERFACES

LEE KD, PARK MJ, KIM DY, KIM SM, KANG B, KIM S, KIM H, LEE HS, KANG Y, YOON SS, HONG BH, KIM D

Effects of Plasma Treatment on the Electrical Properties of AlGaN/GaN Schottky Diodes with Graphene/Ni/Au Electrodes

NANOSCIENCE NANOTECHNOLOGY LETTERS

HAN S, CHO I, KIM H, MAGESHWARI K, PARK J

Impact of graphene and single-layer BN insertion on bipolar resistive switching characteristics in tungsten oxide resistive memory

THIN SOLID FILMS

KIM J, KIM D, JO Y, HAN J, WOO H, KIM H, KIM KK, HONG JP, IM H

Bifunctional effects of the ordered Si atoms intercalated between quasi-free-standing epitaxial graphene and SiC(0001): graphene doping and substrate band bending

NEW JOURNAL OF PHYSICS

KIM H, DUGERJAV O, ARVISBAATAR A, SEO JM