国家/地区 China（2）
关键词 CONDUCTION MECHANISM（3）
出版物 ORGANIC ELECTRONICS（2）
出版时间 2016（3）
机构 HANYANG UNIV（2）
作者 KIM TW（2） LI FS（2） LIN J（2） OOI PC（2）

Improvement of On/Off Ratio in Solution-Processed Graphene-Zinc Oxide Resistive Switching Memory by Blending with Polystyrene

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

KIM C, JOHRA FT, KIM J, LEE J, JUNG WG, LEE MJ

Tristable switching of the electrical conductivity through graphene quantum dots sandwiched in multi-stacked poly(methyl methacrylate) layers

ORGANIC ELECTRONICS

OOI PC, LIN J, KIM TW, LI FS

Indium-tin-oxide, free, flexible, nonvolatile memory devices based on graphene quantum dots sandwiched between polymethylsilsesquioxane layers

ORGANIC ELECTRONICS

OOI PC, LIN J, KIM TW, LI FS