Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes
NANOTECHNOLOGY
HWANG WT, MIN M, JEONG H, KIM D, JANG J, YOO D, JANG Y, KIM JW, YOON J, CHUNG S, YI GC, LEE H, WANG G, LEE T
ACS APPLIED MATERIALS INTERFACES
PARK M, SONG K, LEE T, CHA J, LYO I, KIM BS
JOURNAL OF NANOSCIENCE NANOTECHNOLOGY
JANG Y, JEONG H, KIM D, HWANG WT, JEONG I, SONG H, JEONG H, MIN M, LEE T
ACS APPLIED MATERIALS INTERFACES
YANG K, LEE J, LEE JS, KIM D, CHANG GE, SEO J, CHEONG E, LEE T, CHO SW
NATURE
KIM K, LEE T, KWON Y, SEO Y, SONG J, PARK JK, LEE H, PARK JY, IHEE H, CHO SJ, RYOO R
JOURNAL OF PHYSICS DAPPLIED PHYSICS
MAS UD FA, CHO H, LEE T, RHO H, SEO TH, KIM MJ
NANOTECHNOLOGY
JANG Y, JEONG H, KIM D, HWANG WT, KIM JW, JEONG I, SONG H, YOON J, YI GC, JEONG H, LEE T
SCIENTIFIC REPORTS
KWON W, KIM YH, KIM JH, LEE T, DO S, PARK Y, JEONG MS, LEE TW, RHEE SW
NPG ASIA MATERIALS
HONG J, LEE JB, LEE S, SEO J, LEE H, PARK JY, AHN JH, SEO TI, LEE T, LEE HBR
NANO LETTERS
KUMAR D, LEE A, LEE T, LIM M, LIM DK