国家/地区
关键词 DOPING（3）
出版物 JOURNAL OF PHYSICSCONDENSED MATTER（3）
出版时间 2016（3）
机构
作者

Band gap engineering in penta-graphene by substitutional doping: first-principles calculations

JOURNAL OF PHYSICSCONDENSED MATTER

BERDIYOROV GR, DIXIT G, MADJET ME

Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

JOURNAL OF PHYSICSCONDENSED MATTER

AREZKI H, BOUTCHICH M, ALAMARGUY D, MADOURI A, ALVAREZ J, CABARROCAS PRI, KLEIDER JP, YAO F, LEE YH

The influence of Gaussian strain on sublattice selectivity of impurities in graphene

JOURNAL OF PHYSICSCONDENSED MATTER

LAWLOR JA, ROCHA CG, TORRES V, LATGE A, FERREIRA MS