国家/地区 Korea（3）
关键词 NONVOLATILE MEMORY（6）
出版物
出版时间 2017（6）
机构
作者 LEE S（2）

Solution-processed highly efficient Au nanoparticles and their reduced graphene oxide nanocomposites as charge trapping media for ZnO thin film transistor nonvolatile memory

JOURNAL OF ALLOYS COMPOUNDS

KUMAR M, OTARI S, JEONG H, LEE D

Reduced graphene oxide preparation and its applications in solution-processed write-once-read-many-times graphene-based memory device

CARBON

OOI PC, HANIFF MASM, WEE MFMR, DEE CF, GOH BT, MOHAMED MA, MAJLIS BY

Graphene and Related Materials for Resistive Random Access Memories

ADVANCED ELECTRONIC MATERIALS

HUI F, GRUSTANGUTIERREZ E, LONG SB, LIU Q, OTT AK, FERRARI AC, LANZA M

Flexible resistive random access memory devices by using NiOx/GaN microdisk arrays fabricated on graphene films

NANOTECHNOLOGY

LEE K, PARK JW, TCHOE Y, YOON J, CHUNG K, YOON H, LEE S, YOON C, PARK BH, YI GC

Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide-Titanium Oxide Memories

ACS NANO

NAGAREDDY VK, BARNES MD, ZIPOL F, LAI KT, ALEXEEV AM, CRACIUN MF, WRIGHT CD

Different working mechanisms for a graphene resistive memory based on oxygen-ion transport

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

LEE S