国家/地区 Usa（4）
关键词
出版物 PHYSICAL REVIEW B（2）
出版时间 2017（4）
机构 NIST（3）
作者 RIGOSI AF（4）

Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy

PHYSICAL REVIEW B

HILL HM, RIGOSI AF, CHOWDHURY S, YANG YF, NGUYEN NV, TAVAZZA F, ELMQUIST RE, NEWELL DB, WALKER ARH

Exciton broadening in WS2/graphene heterostructures

PHYSICAL REVIEW B

HILL HM, RIGOSI AF, RAJA A, CHERNIKOV A, ROQUELET C, HEINZ TF

Preservation of Surface Conductivity and Dielectric Loss Tangent in Large-Scale, Encapsulated Epitaxial Graphene Measured by Noncontact Microwave Cavity Perturbations

SMALL

RIGOSI AF, GLAVIN NR, LIU CI, YANG YF, OBRZUT J, HILL HM, HU JN, LEE HY, WALKER ARH, RICHTER CA, ELMQUIST RE, NEWELL DB

Electrical Stabilization of Surface Resistivity in Epitaxial Graphene Systems by Amorphous Boron Nitride Encapsulation

ACS OMEGA

RIGOSI AF, LIU CI, GLAVIN NR, YANG YF, HILL HM, HU JN, WALKER ARH, RICHTER CA, ELMQUIST RE, NEWELL DB