国家/地区 Belgium（9）
关键词 GRAPHENE（9）
出版物
出版时间 2018（9）
机构 CATHOLIC UNI.（3） KATHOLIEKE U.（2） UNIV GHENT（2）
作者 RASKIN JP（3） VAN THOURHOU.（2）

Gate-Tunable Nonlinear Refraction and Absorption in Graphene-Covered Silicon Nitride Waveguides

ACS PHOTONICS

ALEXANDER K, SAVOSTIANOVA NA, MIKHAILOV SA, VAN THOURHOUT D, KUYKEN B

Electronic Detection of Oxygen Adsorption and Size-Specific Doping of Few-Atom Gold Clusters on Graphene

ADVANCED MATERIALS INTERFACES

SCHEERDER JE, LIU SL, ZHARINOV VS, RECKINGER N, COLOMER JF, CHENG HP, VAN DE VONDEL J, JANSSENS E

A Fast and Room-Temperature Operation Ammonia Sensor Based on Compound of Graphene With Polypyrrole

IEEE SENSORS JOURNAL

TANG XH, LAHEM D, RASKIN JP, GERARD P, GENG X, ANDRE N, DEBLIQUY M

Modeling of Edge Scattering in Graphene Interconnects

IEEE ELECTRON DEVICE LETTERS

CONTINO A, CIOFI I, WU XY, ASSELBERGHS I, CELANO U, WILSON CJ, TOKEI Z, GROESENEKEN G, SOREE B

Role of Cu foil in-situ annealing in controlling the size and thickness of CVD graphene domains

CARBON

HUET B, RASKIN JP

Innovative graphene microbial platforms for domestic wastewater treatment

REVIEWS IN ENVIRONMENTAL SCIENCE BIOTECHNOLOGY

HEGAB H, ELMEKAWY A, VAN DEN AKKER B, GINICMARKOVIC M, SAINT C, NEWCOMBE G, PANT D

High Extinction Ratio Hybrid Graphene-Silicon Photonic Crystal Switch

IEEE PHOTONICS TECHNOLOGY LETTERS

SHIRAMIN LA, XIE WQ, SNYDER B, DE HEYN P, VERHEYEN P, ROELKENS G, VAN THOURHOUT D

Intrinsic rectification in common-gated graphene field-effect transistors

NANO ENERGY

HADDAD PA, FLANDRE D, RASKIN JP

Magnetic field dependence of the atomic collapse state in graphene

2D MATERIALS

MOLDOVAN D, MASIR MR, PEETERS FM