国家/地区 Vietnam（6）
关键词 ELECTRONIC PROPERTI.（5） GRAPHENE（4） SCHOTTKY CONTACT（3）
DFT CALCULATION（2） ELECTRIC FIELD（2） STRAIN（2）
出版物 SUPERLATTICES MICRO.（2）
出版时间 2018（6）
机构 LE QUY DON T.（4） DUY TAN UNIV（2）
作者 ILYASOV VV（6）

First principles study on the electronic properties and Schottky barrier of Graphene/InSe heterostructure

SUPERLATTICES MICROSTRUCTURES

PHAM KD, HIEU NN, ILYASOV VV, PHUC HV, HOI BD, FEDDI E, THUAN NV, NGUYEN CV

Tuning the Electronic and Optical Properties of Two-Dimensional Graphene-like Nanosheet by Strain Engineering

JOURNAL OF ELECTRONIC MATERIALS

PHUC HV, TUAN VV, HIEU NN, ILYASOV VV, FEDOROV IA, HOI BD, PHUONG LTT, HIEU NV, FEDDI E, NGUYEN CV

Van der Waals graphene/g-GaSe heterostructure: Tuning the electronic properties and Schottky barrier by interlayer coupling, biaxial strain, and electric gating

JOURNAL OF ALLOYS COMPOUNDS

PHUC HV, ILYASOV VV, HIEU NN, AMIN B, NGUYEN CV

Adsorption and magnetism of bilayer graphene on the MnO polar surface with oxygen vacancies in the interface: First principles study

SUPERLATTICES MICROSTRUCTURES

ILYASOV VV, ERSHOV IV, POPOVA IG, PHAM KD, NGUYEN CV

First-principles study of electronic properties of AB-stacked bilayer armchair graphene nanoribbons under out-plane strain

INDIAN JOURNAL OF PHYSICS

NGUYEN CV, HIEU NV, NHAN LC, PHUC HV, ILYASOV VV, HIEU NN

Electric-field tunable electronic properties and Schottky contact of graphene/phosphorene heterostructure

VACUUM

PHUC HV, ILYASOV VV, HIEU NN, NGUYEN CV