国家/地区 Germany（7）
关键词 GRAPHENE（5） HEXAGONAL BORON NIT.（2）
出版物
出版时间 2021（8）
机构
作者 NEUMAIER D（8）

Dispersive sensing of charge states in a bilayer graphene quantum dot

APPLIED PHYSICS LETTERS

BANSZERUS L, MOLLER S, ICKING E, STEINER C, NEUMAIER D, OTTO M, WATANABE K, TANIGUCHI T, VOLK C, STAMPFER C

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

ADVANCED ELECTRONIC MATERIALS

WANG ZX, HEMMETTER A, UZLU B, SAEED M, HAMED A, KATARIA S, NEGRA R, NEUMAIER D, LEMME MC

Terahertz Rectennas on Flexible Substrates Based on One-Dimensional Metal-Insulator-Graphene Diodes

ACS APPLIED ELECTRONIC MATERIALS

HEMMETTER A, YANG XX, WANG ZX, OTTO M, UZLU B, ANDREE M, PFEIFFER U, VOROBIEV A, STAKE J, LEMME MC, NEUMAIER D

Evidence for Local Spots of Viscous Electron Flow in Graphene at Moderate Mobility

NANO LETTERS

SAMADDAR S, STRASDAS J, JANSSEN K, JUST S, JOHNSEN T, WANG ZX, UZLU B, LI S, NEUMAIER D, LIEBMANN M, MORGENSTERN M

Pulsed-gate spectroscopy of single-electron spin states in bilayer graphene quantum dots

PHYSICAL REVIEW B

BANSZERUS L, HECKER K, ICKING E, TRELLENKAMP S, LENTZ F, NEUMAIER D, WATANABE K, TANIGUCHI T, VOLK C, STAMPFER C

Fully Integrated 2.4-GHz Flexible Rectifier Using Chemical-Vapor-Deposition Graphene MMIC Process

IEEE TRANSACTIONS ON ELECTRON DEVICES

FAN CY, WEI MD, UZLU B, WANG ZX, NEUMAIER D, NEGRA R

Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer

ADVANCED MATERIALS TECHNOLOGIES

CANTO B, OTTO M, POWELL MJ, BABENKO V, O MAHONY A, KNOOPS HCM, SUNDARAM RS, HOFMANN S, LEMME MC, NEUMAIER D

Study on the Adhesion Properties of Graphene and Hexagonal Boron Nitride Monolayers in Multilayered Micro-devices by Scratch Adhesion Test

JOURNAL OF MATERIALS ENGINEERING PERFORMANCE

IVANOV E, BATAKALIEV T, KOTSILKOVA R, OTTO M, NEUMAIER D