国家/地区 Germany（19）
关键词 GRAPHENE（6） BILAYER GRAPHENE（2） FIELD EFFECT TRANSI.（2）
FIELDEFFECT TRANSIS.（2） GRAPHENE DEVICE（2） PHOTODETECTOR（2）
出版物 NANO LETTERS（3） NANOSCALE（3） OPTICS EXPRESS（3）
SCIENTIFIC REPORTS（2）
出版时间 2017（4） 2014（3） 2016（3） 2019（3） 2015（2）
机构 AMO GMBH（19）
作者 NEUMAIER D（19）

Gate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivity

SCIENTIFIC REPORTS

UZLU B, WANG ZX, LUKAS S, OTTO M, LEMME MC, NEUMAIER D

Flexible One-Dimensional Metal-Insulator-Graphene Diode

ACS APPLIED ELECTRONIC MATERIALS

WANG ZX, UZLU B, SHAYGAN M, OTTO M, RIBEIRO M, MARIN EG, IANNACCONE G, FIORI G, ELSAYED MS, NEGRA R, NEUMAIER D

Integrating graphene into semiconductor fabrication lines

NATURE MATERIALS

NEUMAIER D, PINDL S, LEMME MC

50 GBit/s Photodetectors Based on Wafer-Scale Graphene for Integrated Silicon Photonic Communication Systems

ACS PHOTONICS

SCHALL D, NEUMAIER D, MOHSIN M, CHMIELAK B, BOLTEN J, PORSCHATIS C, PRINZEN A, MATHEISEN C, KUEBART W, JUNGINGER B, TEMPL W, GIESECKE AL, KURZ H

Experimental Verification of Carrier Multiplication in Graphene

NANO LETTERS

PLOTZING T, WINZER T, MALIC E, NEUMAIER D, KNORR A, KURZT H

Graphene based low insertion loss electro-absorption modulator on SOI waveguide

OPTICS EXPRESS

MOHSIN M, SCHALL D, OTTO M, NOCULAK A, NEUMAIER D, KURZ H

Integrated Ring Oscillators based on high-performance Graphene Inverters

SCIENTIFIC REPORTS

SCHALL D, OTTO M, NEUMAIER D, KURZ H

Current Saturation and Voltage Gain in Bilayer Graphene Field Effect Transistors

NANO LETTERS

SZAFRANEK BN, FIORI G, SCHALL D, NEUMAIER D, KURZ H

High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants

NANO LETTERS

SZAFRANEK BN, SCHALL D, OTTO M, NEUMAIER D, KURZ H

Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature

APPLIED PHYSICS LETTERS

SZAFRANEK BN, SCHALL D, OTTO M, NEUMAIER D, KURZ H