国家/地区 Korea（12）
关键词 GRAPHENE（5） MOS2（2）
出版物
出版时间 2016（3） 2018（3） 2015（2）
机构 AJOU UNIV（12）
作者 AHN YH（12）

Large-area growth of high-quality graphene/MoS2 vertical heterostructures by chemical vapor deposition with nucleation control

CARBON

NGUYEN VT, KIM YC, AHN YH, LEE S, PARK JY

Ultrafast Strong-Field Tunneling Emission in Graphene Nanogaps

ACS PHOTONICS

SON BH, KIM HS, PARK JY, LEE S, PARK DJ, AHN YH

Enhanced nucleation and growth of HfO2 thin films grown by atomic layer deposition on graphene

JOURNAL OF ALLOYS COMPOUNDS

KIM SB, AHN YH, PARK JY, LEE SW

Evaluation of Transport Parameters in MoS2/Graphene Junction Devices Fabricated by Chemical Vapor Deposition

ACS APPLIED MATERIALS INTERFACES

KIM YC, NGUYEN VT, LEE S, PARK JY, AHN YH

Terahertz conductivity of reduced graphene oxide films

OPTICS EXPRESS

HONG JT, LEE KM, SON BH, PARK SJ, PARK DJ, PARK JY, LEE S, AHN YH

Efficient Mode-Locking of Sub-70-fs Ti: Sapphire Laser by Graphene Saturable Absorber

APPLIED PHYSICS EXPRESS

BAEK IH, LEE HW, BAE S, HONG BH, AHN YH, YEOM DI, ROTERMUND F

Electron beam induced removal of PMMA layer used for graphene transfer

SCIENTIFIC REPORTS

SON BH, KIM HS, JEONG H, PARK JY, LEE S, AHN YH

Control of device characteristics by passivation of graphene field effect transistors with polymers

CURRENT APPLIED PHYSICS

JANG G, YIM W, AHN YH, LEE S, PARK JY

Enhanced Nucleation of High-k Dielectrics on Graphene by Atomic Layer Deposition

CHEMISTRY OF MATERIALS

PARK YH, KIM MH, BIN KIM S, JUNG HJ, CHAE K, AHN YH, PARK JY, ROTERMUND F, LEE SW

Characterization of chemical doping of graphene by in-situ Raman spectroscopy

APPLIED PHYSICS LETTERS

KIM SJ, PARK SJ, KIM HY, JANG GS, PARK DJ, PARK JY, LEE S, AHN YH