国家/地区 China（19）
关键词 GRAPHENE（6） CHARGE TRAP（2）
出版物 ADVANCED ELECTRONIC.（3） APPLIED PHYSICS LET.（2） CARBON（2）
NANOTECHNOLOGY（2）
出版时间 2015（5） 2016（5） 2017（2） 2019（2） 2020（2）
机构 CHINESE ACAD SCI（19）
作者 ZHANG DY（19）

Controllable p-to-n Type Conductance Transition in Top-Gated Graphene Field Effect Transistor by Interface Trap Engineering

ADVANCED ELECTRONIC MATERIALS

PENG SG, JIN Z, YAO Y, HUANG XN, ZHANG DY, NIU JB, SHI JY, ZHANG YH, YU GH

A composite with a gradient distribution of graphene and its anisotropic electromagnetic reflection

RSC ADVANCES

ZHANG DY, JIN Z, SHI JY, PENG SG, HUANG XN, YAO Y, LI YK, DING WC, WANG DH

A uniform stable P-type graphene doping method with a gold etching process

NANOTECHNOLOGY

YAO Y, PENG SA, HUANG XN, ZHANG DY, SHI JY, JIN Z

Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single-Gate Graphene Transistors

ADVANCED ELECTRONIC MATERIALS

YAO Y, HUANG XN, PENG OG, ZHANG DY, SHI JY, YU GH, LIU Q, JIN Z

How Do Contact and Channel Contribute to the Dirac Points in Graphene Field-Effect Transistors?

ADVANCED ELECTRONIC MATERIALS

PENG SA, JIN Z, ZHANG DY, SHI JY, NIU JB, HUANG XN, YAO Y, ZHANG YH, YU GH

The Anistropy of Field Effect Mobility of CVD Graphene Grown on Copper Foil

SMALL

ZHANG DY, JIN Z, SHI JY, MA P, PENG SG, LIU XY, YE TC

Heavily p-type doped chemical vapor deposition graphene field-effect transistor with current saturation

APPLIED PHYSICS LETTERS

PENG SA, JIN Z, MA P, YU GH, SHI JY, ZHANG DY, CHEN J, LIU XY, YE TC

Evidence of electric field-tunable tunneling probability in graphene and metal contact

NANOSCALE

PENG SG, JIN Z, ZHANG DY, SHI JY, ZHANG YH, YU GH

Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor

ACS APPLIED MATERIALS INTERFACES

PENG SG, JIN Z, ZHANG DY, SHI JY, MAO DC, WANG SQ, YU GH

Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistors

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WANG SQ, JIN Z, MUHAMMAD A, PENG SG, HUANG XN, ZHANG DY, SHI JY