国家/地区 China（6）
关键词 GRAPHENE（2）
出版物 MATERIALS LETTERS（2）
出版时间 2018（6）
机构 CHINESE ACAD SCI（6）
作者 ZHANG YH（6）

Mechanism of SiOx particles formation during CVD graphene growth on Cu substrates

CARBON

GE XM, ZHANG YH, CHEN LX, ZHENG YH, CHEN ZY, LIANG YJ, HU SK, LI J, SUI YP, YU GH, JIN Z, LIU XY

Thermal-assisted direct transfer of graphene onto flexible substrates

MATERIALS LETTERS

CHEN ZY, ZHANG YH, GE XM, SUI YP, LIANG YJ, HU SK, LI J, YU GH

How Do Contact and Channel Contribute to the Dirac Points in Graphene Field-Effect Transistors?

ADVANCED ELECTRONIC MATERIALS

PENG SA, JIN Z, ZHANG DY, SHI JY, NIU JB, HUANG XN, YAO Y, ZHANG YH, YU GH

Effects of carbon-based impurities on graphene growth

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

GE XM, ZHANG YH, CHEN ZY, LIANG YJ, HU SK, SUI YP, YU GH, PENG SG, JIN Z, LIU XY

A waterless cleaning method of the Cu foil for CVD graphene growth

MATERIALS LETTERS

ZHANG YH, CHEN ZY, GE XM, LIANG YJ, HUA SK, SUI YP, YU GH

Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition

RSC ADVANCES

SUI YP, CHEN ZY, ZHANG YH, HU SK, LIANG YJ, GE XM, LI J, YU GH, PENG SG, JIN Z, LIU XY