国家/地区 China（2）
关键词
出版物 ADVANCED ELECTRONIC MATERIALS（2）
出版时间
机构 CHINESE ACAD SCI（2）
作者 ZHANG YH（2）

Controllable p-to-n Type Conductance Transition in Top-Gated Graphene Field Effect Transistor by Interface Trap Engineering

ADVANCED ELECTRONIC MATERIALS

PENG SG, JIN Z, YAO Y, HUANG XN, ZHANG DY, NIU JB, SHI JY, ZHANG YH, YU GH

How Do Contact and Channel Contribute to the Dirac Points in Graphene Field-Effect Transistors?

ADVANCED ELECTRONIC MATERIALS

PENG SA, JIN Z, ZHANG DY, SHI JY, NIU JB, HUANG XN, YAO Y, ZHANG YH, YU GH