国家/地区 China（3）
关键词
出版物 APPLIED PHYSICS LETTERS（3）
出版时间
机构 CHINESE ACAD SCI（3）
作者 SHI JY（3）

Heavily p-type doped chemical vapor deposition graphene field-effect transistor with current saturation

APPLIED PHYSICS LETTERS

PENG SA, JIN Z, MA P, YU GH, SHI JY, ZHANG DY, CHEN J, LIU XY, YE TC

Depressed scattering across grain boundaries in single crystal graphene

APPLIED PHYSICS LETTERS

CHEN J, JIN Z, MA P, WANG H, WANG HM, SHI JY, PENG SG, LIU XY, YE TC

Effect of source-gate spacing on direct current and radio frequency characteristic of graphene field effect transistor

APPLIED PHYSICS LETTERS

PENG SA, JIN Z, PENGMA, ZHANG DY, SHI JY, WANG XY, WANG SQ, MEILI, LIU XY, YU GH