国家/地区 Korea（6） China（2）
关键词 GRAPHENE QUANTUM DO.（3） CONDUCTION MECHANIS.（2） ELECTRICAL CHARACTE.（2）
NANOCOMPOSITE（2） NONVOLATILE MEMORY .（2）
出版物 ORGANIC ELECTRONICS（8）
出版时间 2017（3） 2016（2）
机构 HANYANG UNIV（8）
作者 KIM TW（6） KIM DH（2） LI FS（2） LIN J（2）
OOI PC（2）

Highly-efficient organic light-emitting devices based on poly(N,N '-bis-4-butylphenyl-N,N '-bisphenyl)benzidine: octadecylamine-graphene quantum dots

ORGANIC ELECTRONICS

KIM DH, KIM TW

Enhancement of the photocurrent in ultraviolet photodetectors fabricated utilizing hybrid polymer-ZnO quantum dot nanocomposites due to an embedded graphene layer

ORGANIC ELECTRONICS

YANG HY, SON DI, KIM TW, LEE JM, PARK WI

Highly-reproducible nonvolatile memristive devices based on polyvinylpyrrolidone: Graphene quantum-dot nanocomposites

ORGANIC ELECTRONICS

KIM DH, KIM WK, WOO SJ, WU C, KIM TW

Enhanced gas barrier properties of graphene-TiO2 nanocomposites on plastic substrates assisted by UV photoreduction of graphene oxide

ORGANIC ELECTRONICS

NAM S, JEONG YJ, PARK CE, JANG J

Graphene nanosheets as counter electrode with phenoxazine dye for efficient dye sensitized solar cell

ORGANIC ELECTRONICS

SAHITO IA, SUN KC, LEE W, KIM JP, JEONG SH

Tristable switching of the electrical conductivity through graphene quantum dots sandwiched in multi-stacked poly(methyl methacrylate) layers

ORGANIC ELECTRONICS

OOI PC, LIN J, KIM TW, LI FS

Indium-tin-oxide, free, flexible, nonvolatile memory devices based on graphene quantum dots sandwiched between polymethylsilsesquioxane layers

ORGANIC ELECTRONICS

OOI PC, LIN J, KIM TW, LI FS

Multilevel characteristics and operating mechanisms of nonvolatile memory devices based on a floating gate of graphene oxide sheets sandwiched between two polystyrene layers

ORGANIC ELECTRONICS

KIM YN, LEE NH, YUN DY, KIM TW