国家/地区 China（2）
关键词
出版物
出版时间
机构 HEBEI UNIV（2）
作者 LI XY（2）

Performance enhancement of nonvolatile memory by using a trapping layer of graphene oxide quantum dots

MATERIALS RESEARCH EXPRESS

JIA XL, HONG W, LI XY, WANG JJ, TAO Y, ZHOU ZY, ZHAO JH, CHAO L, RON DL, YAN XB

Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning

ADVANCED FUNCTIONAL MATERIALS

YAN XB, ZHANG L, CHEN HW, LI XY, WANG JJ, LIU Q, LU C, CHEN JS, WU HQ, ZHOU P