国家/地区 Japan（6）
关键词
出版物
出版时间 2014（3） 2011（2）
机构 KWANSEI GAKUIN UNIV（6）
作者 KANEKO T（6）

Interactions Between Epitaxial Graphene Grown on the Si- and C-Faces of 4H-SiC Investigated Using Raman Imaging and Tip-Enhanced Raman Scattering

APPLIED SPECTROSCOPY

UEMURA S, VANTASIN S, KITAHAMA Y, TANAKA YY, SUZUKI T, DOUJIMA D, KANEKO T, OZAKI Y

Tip-Enhanced Raman Scattering of the Local Nanostructure of Epitaxial Graphene Grown on 4H-SiC (000(1)over-bar)

JOURNAL OF PHYSICAL CHEMISTRY C

VANTASIN S, TANABE I, TANAKA Y, ITOH T, SUZUKI T, KUTSUMA Y, ASHIDA K, KANEKO T, OZAKI Y

Blinking suppression of CdTe quantum dots on epitaxial graphene and the analysis with Marcus electron transfer

APPLIED PHYSICS LETTERS

HIROSE T, KUTSUMA Y, KURITA A, KANEKO T, TAMAI N

Energy Transfer Dynamics of CdTe Quantum Dots on Epitaxial Graphene Prepared by Si Sublimation of 4H-SiC(0001)

CHEMISTRY LETTERS

HIROSE T, SHIGEMASA H, KUTSUMA Y, KANEKO T, TAMAI N

4H-SiC(0001) Basal Plane Stability during the Growth of Epitaxial Graphene on Inverted-Mesa Structures

JAPANESE JOURNAL OF APPLIED PHYSICS

USHIO S, KUTSUMA Y, YOSHII A, TAMAI N, OHTANI N, KANEKO T

Wide-range temperature dependence of epitaxial graphene growth on 4H-SiC (0 0 0-1): A study of ridge structures formation dynamics associated with temperature

JOURNAL OF CRYSTAL GROWTH

USHIO S, YOSHII A, TAMAI N, OHTANI N, KANEKO T