国家/地区 Singapore（10）
关键词 GRAPHENE（4） RAMAN（3） ANNEALING（2）
出版物 ACS NANO（3） APPLIED PHYSICS LET.（2）
出版时间 2010（5） 2008（3）
机构 NANYANG TECHNOL UNIV（10）
作者 WANG HM（10）

How do the electron beam writing and metal deposition affect the properties of graphene during device fabrication?

NANOSCALE

SHEN XN, WANG HM, YU T

Self-Limited Oxidation: A Route to Form Graphene Layers from Graphite by One-Step Heating

SMALL

CONG CX, YU T, WANG HM, ZHENG KH, GAO PQ, CHEN XD, ZHANG Q

Hysteresis of Electronic Transport in Graphene Transistors

ACS NANO

WANG HM, WU YH, CONG CX, SHANG JZ, YU T

Raman Study on the G Mode of Graphene for Determination of Edge Orientation

ACS NANO

CONG CX, YU T, WANG HM

The effect of vacuum annealing on graphene

JOURNAL OF RAMAN SPECTROSCOPY

NI ZH, WANG HM, LUO ZQ, WANG YY, YU T, WU YH, SHEN ZX

Fabrication of graphene nanogap with crystallographically matching edges and its electron emission properties

APPLIED PHYSICS LETTERS

WANG HM, ZHENG Z, WANG YY, QIU JJ, GUO ZB, SHEN ZX, YU T

Raman studies of monolayer graphene: The substrate effect

JOURNAL OF PHYSICAL CHEMISTRY C

WANG YY, NI ZH, YU T, SHEN ZX, WANG HM, WU YH, CHEN W, WEE ATS

Tunable stress and controlled thickness modification in graphene by annealing

ACS NANO

NI ZH, WANG HM, MA Y, KASIM J, WU YH, SHEN ZX

Interference enhancement of Raman signal of graphene

APPLIED PHYSICS LETTERS

WANG YY, NI ZH, SHEN ZX, WANG HM, WU YH

Electrical field tuning of magneto-Raman scattering in monolayer graphene

NANO RESEARCH

SHEN XN, QIU CY, CAO BC, CONG CX, YANG WH, WANG HM, YU T