国家/地区 Singapore（4）
关键词
出版物
出版时间 2010（4）
机构 NATL UNIV SINGAPORE（4）
作者 LAM KT（4）

Ambipolar bistable switching effect of graphene

APPLIED PHYSICS LETTERS

SHIN YJ, KWON JH, KALON G, LAM KT, BHATIA CS, LIANG G, YANG H

Influence of edge roughness on graphene nanoribbon resonant tunnelling diodes

JOURNAL OF PHYSICS DAPPLIED PHYSICS

LIANG GC, BIN KHALID S, LAM KT

A Simulation Study of Graphene-Nanoribbon Tunneling FET With Heterojunction Channel

IEEE ELECTRON DEVICE LETTERS

LAM KT, SEAH D, CHIN SK, KUMAR SB, SAMUDRA G, YEO YC, LIANG G

Effect of Ribbon Width and Doping Concentration on Device Performance of Graphene Nanoribbon Tunneling Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

LAM KT, CHIN SK, SEAH DW, KUMAR SB, LIANG GC