国家/地区 Germany（6）
关键词 EPITAXIAL GRAPHENE（3） BUFFER LAYER（2） GRAPHENE BUFFER LAY.（2）
RESISTANCE ANISOTRO.（2）
出版物
出版时间 2019（2）
机构 PHYS TECH BUNDESANSTALT（7）
作者 STOSCH R（7）

Homogeneous Large-Area Quasi-Free-Standing Monolayer and Bilayer Graphene on SiC

ACS APPLIED NANO MATERIALS

PAKDEHI DM, PIERZ K, WUNDRACK S, APROJANZ J, NGUYEN TTN, DZIOMBA T, HOHLS F, BAKIN A, STOSCH R, TEGENKAMP C, AHLERS FJ, SCHUMACHER HW

Probing the structural transition from buffer layer to quasifreestanding monolayer graphene by Raman spectroscopy

PHYSICAL REVIEW B

WUNDRACK S, PAKDEHI DM, SCHADLICH P, SPECK F, PIERZ K, SEYLLER T, SCHUMACHER HW, BAKIN A, STOSCH R

A morphology study on the epitaxial growth of graphene and its buffer layer

THIN SOLID FILMS

KRUSKOPF M, PIERZ K, PAKDEHI DM, WUNDRACK S, STOSCH R, BAKIN A, SCHUMACHER HW

All-Carbon Vertical van der Waals Heterostructures: Non-destructive Functionalization of Graphene for Electronic Applications

ADVANCED MATERIALS

WOSZCZYNA M, WINTER A, GROTHE M, WILLUNAT A, WUNDRACK S, STOSCH R, WEIMANN T, AHLERS F, TURCHANIN A

Graphene on gallium arsenide: Engineering the visibility

APPLIED PHYSICS LETTERS

FRIEDEMANN M, PIERZ K, STOSCH R, AHLERS FJ

Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

2D MATERIALS

KRUSKOPF M, PAKDEHI DM, PIERZ K, WUNDRACK S, STOSCH R, DZIOMBA T, GOTZ M, BARINGHAUS J, APROJANZ J, TEGENKAMP C, LIDZBA J, SEYLLER T, HOHLS F, AHLERS FJ, SCHUMACHER HW

Epitaxial graphene on SiC: modification of structural and electron transport properties by substrate pretreatment

JOURNAL OF PHYSICSCONDENSED MATTER

KRUSKOPF M, PIERZ K, WUNDRACK S, STOSCH R, DZIOMBA T, KALMBACH CC, MULLER A, BARINGHAUS J, TEGENKAMP C, AHLERS FJ, SCHUMACHER HW