国家/地区 Usa（7）
关键词
出版物 PHYSICAL REVIEW B（2）
出版时间 2009（3） 2010（3）
机构 PURDUE UNIV（7）
作者 BOLEN ML（7）

Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)

JOURNAL OF APPLIED PHYSICS

SHEN T, NEAL AT, BOLEN ML, GU JJ, ENGEL LW, CAPANO MA, YE PD

Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC

NEW JOURNAL OF PHYSICS

PRAKASH G, BOLEN ML, COLBY R, STACH EA, CAPANO MA, REIFENBERGER R

Empirical Study of Hall Bars on Few-Layer Graphene on C-Face 4H-SiC

JOURNAL OF ELECTRONIC MATERIALS

BOLEN ML, SHEN T, GU JJ, COLBY R, STACH EA, YE PD, CAPANO MA

AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H-SiC(000(1)over-bar)

CARBON

PRAKASH G, CAPANO MA, BOLEN ML, ZEMLYANOU D, REIFENBERGER RG

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

APPLIED PHYSICS LETTERS

SHEN T, GU JJ, XU M, WU YQ, BOLEN ML, CAPANO MA, ENGEL LW, YE PD

Graphene formation mechanisms on 4H-SiC(0001)

PHYSICAL REVIEW B

BOLEN ML, HARRISON SE, BIEDERMANN LB, CAPANO MA

Insights into few-layer epitaxial graphene growth on 4H-SiC(000(1)over-bar substrates from STM studies

PHYSICAL REVIEW B

BIEDERMANN LB, BOLEN ML, CAPANO MA, ZEMLYANOV D, REIFENBERGER RG