国家/地区 China（8）
关键词
出版物 CARBON（2） JOURNAL OF MATERIAL.（2） RSC ADVANCES（2）
出版时间 2020（4）
机构 SHANDONG UNIV（8）
作者 SUN L（8）

Effect of Ag nanoparticles on wafer-scale quasi-free-standing graphene characterization by surface enhanced Raman spectroscopy

MATERIALS RESEARCH EXPRESS

SUN L, JIANG C, CHEN XF, YU FP, ZHAO X, XU XA, XU SC

Theoretical prediction of eliminating the buffer layer and achieving charge neutrality for epitaxial graphene on 6H-SiC(0001) via boron compound intercalations

CARBON

LUO XY, SUN XC, LI YL, YU FP, SUN L, CHENG XF, ZHAO X

A Strategy To Prepare High-Quality Monocrystalline Graphene: Inducing Graphene Growth with Seeding Chemical Vapor Deposition and Its Mechanism

ACS APPLIED MATERIALS INTERFACES

SU Z, SUN XC, LIU XZ, ZHANG J, SUN L, ZHANG X, LIU ZX, YU FP, LI YL, CHENG XF, DING Y, ZHAO X

Charge-neutral epitaxial graphene on 6H-SiC(0001) via FeSi intercalation

CARBON

LUO XY, LIANG GJ, SUN XC, LI YL, YU FP, WEI L, CHENG XF, SUN L, ZHAO X

Induced growth of quasi-free-standing graphene on SiC substrates

RSC ADVANCES

LIU ZX, SU Z, LI QB, SUN L, ZHANG X, YANG ZY, LIU XZ, LI YX, LI YL, YU FP, ZHAO X

Preparation of bilayer graphene utilizing CuO as nucleation sites by CVD method

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

ZHANG J, YANG ZY, SUN L, YU FP, LI YL, CHENG XF, LIU XZ, ZHAO X

Uniform coverage of quasi-free standing monolayer graphene on SiC by hydrogen intercalation

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

YU CC, CHEN XF, ZHANG FS, SUN L, LI T, XU XG, ZHAO X

The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth

RSC ADVANCES

SUN L, CHEN XF, YU WC, SUN HG, ZHAO X, XU XG, YU F, LIU YF