国家/地区 China（4）
关键词
出版物
出版时间 2017（4）
机构 SHANDONG UNIV（4）
作者 ZHAO X（4）

First principles studies on electronic and transport properties of edge contact graphene-MoS2 heterostructure

COMPUTATIONAL MATERIALS SCIENCE

SUN J, LIN N, TANG C, WANG HY, REN H, ZHAO X

High mobility and large domain decoupled epitaxial graphene on SiC (000(1)over-bar) surface obtained by nearly balanced hydrogen etching

MATERIALS LETTERS

ZHANG FS, CHEN XF, YU CC, XU XG, HU XB, QIN X, LI Q, ZHAO X, YU P, WANG RQ

Thermally Evaporated SiO Serving as Gate Dielectric in Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

YANG LT, WANG HB, ZHANG XJ, LI YX, CHEN XF, XU XG, ZHAO X, SONG AM

Uniform coverage of quasi-free standing monolayer graphene on SiC by hydrogen intercalation

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

YU CC, CHEN XF, ZHANG FS, SUN L, LI T, XU XG, ZHAO X