国家/地区
关键词
出版物
出版时间 2019（2）
机构 SINGAPORE UNIV TECHNOL DESIGN（2）
作者 GENG DC（2）

Graphene-Induced in Situ Growth of Monolayer and Bilayer 2D SiC Crystals Toward High-Temperature Electronics

ACS APPLIED MATERIALS INTERFACES

GENG DC, HU JP, FU W, ANG LK, YANG HY

In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains

NPG ASIA MATERIALS

GENG DC, DONG JC, ANG LK, DING F, YANG HY