国家/地区 Spain（7）
关键词 GRAPHENE（5） COMPACT MODEL（3） VERILOGA（3）
FET（2） INTRINSIC CAPACITAN.（2）
出版物 IEEE TRANSACTIONS O.（4）
出版时间 2016（2） 2019（2） 2020（2）
机构 UNIV AUTONOMA BARCELONA（8）
作者 PASADAS F（8）

Does carrier velocity saturation help to enhance f(max) in graphene field-effect transistors?

NANOSCALE ADVANCES

FEIJOO PC, PASADAS F, BONMANN M, ASAD M, YANG XN, GENERALOV A, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J, JIMENEZ D

Non-Quasi-Static Effects in Graphene Field-Effect Transistors Under High-Frequency Operation

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

Large-Signal Model of the Metal-Insulator-Graphene Diode Targeting RF Applications

IEEE ELECTRON DEVICE LETTERS

PASADAS F, SAEED M, HAMED A, WANG ZX, NEGRA R, NEUMAIER D, JIMENEZ D

Large-Signal Model of Graphene Field-Effect Transistors-Part I: Compact Modeling of GFET Intrinsic Capacitances (vol 63, pg 2936, 2016)

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor

NANOTECHNOLOGY

FEIJOO PC, PASADAS F, IGLESIAS JM, MARTIN MJ, RENGEL R, LI CF, KIM W, RIIKONEN J, LIPSANEN H, JIMENEZ D

Large-Signal Model of Graphene Field-Effect Transistors-Part I: Compact Modeling of GFET Intrinsic Capacitances

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

Large-Signal Model of Graphene Field-Effect Transistors-Part II: Circuit Performance Benchmarking

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: Theory versus experiment

JOURNAL OF APPLIED PHYSICS

PASADAS F, JIMENEZ D