国家/地区 Spain（2）
关键词 RESISTIVE RANDOM ACCESS MEMORY（2）
出版物
出版时间
机构 UNIV AUTONOMA BARCELONA（2）
作者

Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices

2D MATERIALS

PAN CB, MIRANDA E, VILLENA MA, XIAO N, JING X, XIE XM, WU TR, HUI F, SHI YY, LANZA M

Evaluation of ultra-thin structures composed of graphene and high-k dielectrics for resistive switching memory applications

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY

WU Q, CLARAMUNT S, PORTI M, NAFRIA M, AYMERICH X